Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures
Crossref DOI link: https://doi.org/10.1038/srep16453
Published Online: 2015-11-13
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Wenliang
Yang, Weijia
Lin, Yunhao
Zhou, Shizhong
Li, Guoqiang
Text and Data Mining valid from 2015-11-13
Version of Record valid from 2015-11-13
Article History
Received: 10 August 2015
Accepted: 14 October 2015
First Online: 13 November 2015
Competing interests
: The authors declare no competing financial interests.