Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy
Crossref DOI link: https://doi.org/10.1038/srep17405
Published Online: 2015-11-30
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wu, PeiTsen
Funato, Mitsuru
Kawakami, Yoichi
Text and Data Mining valid from 2015-11-30
Version of Record valid from 2015-11-30
Article History
Received: 2 July 2015
Accepted: 29 October 2015
First Online: 30 November 2015
Competing interests
: The authors declare no competing financial interests.