Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer
Crossref DOI link: https://doi.org/10.1038/srep18387
Published Online: 2015-12-17
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wen, Zhenchao
Kubota, Takahide
Yamamoto, Tatsuya
Takanashi, Koki
Text and Data Mining valid from 2015-12-17
Version of Record valid from 2015-12-17
Article History
Received: 4 September 2015
Accepted: 17 November 2015
First Online: 17 December 2015
Competing interests
: The authors declare no competing financial interests.