III–V compound semiconductors for mass-produced nano-electronics: theoretical studies on mobility degradation by dislocation
Crossref DOI link: https://doi.org/10.1038/srep22001
Published Online: 2016-02-25
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hur, Ji-Hyun
Jeon, Sanghun
Text and Data Mining valid from 2016-02-25
Version of Record valid from 2016-02-25
Article History
Received: 28 July 2015
Accepted: 5 February 2016
First Online: 25 February 2016
Competing interests
: The authors declare no competing financial interests.