Crossmark

P-Channel InGaN/GaN heterostructure metal-oxide-semiconductor field effect transistor based on polarization-induced two-dimensional hole gas

Published Online: 2016-03-29

Authors

Zhang, Kexiong

Sumiya, Masatomo

Liao, Meiyong

Koide, Yasuo

Sang, Liwen
License Information

Text and Data Mining valid from 2016-03-29

Version of Record valid from 2016-03-29
More Information

Article History

Received: 15 January 2016

Accepted: 11 March 2016

First Online: 29 March 2016

Competing interests

: The authors declare no competing financial interests.

Document is current