Fabrication of InGaN thin-film transistors using pulsed sputtering deposition
Crossref DOI link: https://doi.org/10.1038/srep29500
Published Online: 2016-07-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Itoh, Takeki
Kobayashi, Atsushi
Ueno, Kohei
Ohta, Jitsuo
Fujioka, Hiroshi
Text and Data Mining valid from 2016-07-07
Version of Record valid from 2016-07-07
Article History
Received: 19 May 2016
Accepted: 20 June 2016
First Online: 7 July 2016
Competing interests
: The authors declare no competing financial interests.