A mixed solution-processed gate dielectric for zinc-tin oxide thin-film transistor and its MIS capacitance
Crossref DOI link: https://doi.org/10.1038/srep33576
Published Online: 2016-09-19
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Hunho
Kwack, Young-Jin
Yun, Eui-Jung
Choi, Woon-Seop
Text and Data Mining valid from 2016-09-19
Version of Record valid from 2016-09-19
Article History
Received: 11 April 2016
Accepted: 25 August 2016
First Online: 19 September 2016
Competing interests
: The authors declare no competing financial interests.