Crossmark

Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration

Published Online: 2016-11-04

Authors

Choi, Jun Young

Heo, Keun

Cho, Kyung-Sang

Hwang, Sung Woo

Kim, Sangsig

Lee, Sang Yeol
License Information

Text and Data Mining valid from 2016-11-04

Version of Record valid from 2016-11-04
More Information

Article History

Received: 21 April 2016

Accepted: 14 October 2016

First Online: 4 November 2016

Competing interests

: The authors declare no competing financial interests.

Document is current