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Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations

Crossref DOI link: https://doi.org/10.1038/srep37588

Published Online: 2016-11-21

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lee, H.-P.

Perozek, J.

Rosario, L. D.

Bayram, C.
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Text and Data Mining valid from 2016-11-21

Version of Record valid from 2016-11-21
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Article History

Received: 23 August 2016

Accepted: 31 October 2016

First Online: 21 November 2016

Competing interests

: The authors declare no competing financial interests.

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