Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts
Crossref DOI link: https://doi.org/10.1038/srep41593
Published Online: 2017-02-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chai, Yu
Su, Shanshan
Yan, Dong
Ozkan, Mihrimah
Lake, Roger
Ozkan, Cengiz S.
Text and Data Mining valid from 2017-02-10
Version of Record valid from 2017-02-10
Article History
Received: 5 May 2016
Accepted: 7 December 2016
First Online: 10 February 2017
Competing interests
: The authors declare no competing financial interests.