Flash Memory Featuring Low-Voltage Operation by Crystalline ZrTiO4 Charge-Trapping Layer
Crossref DOI link: https://doi.org/10.1038/srep43659
Published Online: 2017-03-08
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shen, Yung-Shao
Chen, Kuen-Yi
Chen, Po-Chun
Chen, Teng-Chuan
Wu, Yung-Hsien
Text and Data Mining valid from 2017-03-08
Version of Record valid from 2017-03-08
Article History
Received: 18 October 2016
Accepted: 25 January 2017
First Online: 8 March 2017
Competing interests
: The authors declare no competing financial interests.