Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes
Crossref DOI link: https://doi.org/10.1038/srep44627
Published Online: 2017-03-15
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hu, Hongpo
Zhou, Shengjun
Liu, Xingtong
Gao, Yilin
Gui, Chengqun
Liu, Sheng
Text and Data Mining valid from 2017-03-15
Version of Record valid from 2017-03-15
Article History
Received: 3 January 2017
Accepted: 10 February 2017
First Online: 15 March 2017
Competing interests
: The authors declare no competing financial interests.