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Resistive switching mechanism in the one diode-one resistor memory based on p+-Si/n-ZnO heterostructure revealed by in-situ TEM

Published Online: 2017-03-21

Authors

Zhang, Lei

Zhu, Liang

Li, Xiaomei

Xu, Zhi

Wang, Wenlong

Bai, Xuedong
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Text and Data Mining valid from 2017-03-21

Version of Record valid from 2017-03-21
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Article History

Received: 29 December 2016

Accepted: 17 February 2017

First Online: 21 March 2017

Competing interests

: The authors declare no competing financial interests.

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