Dynamic through-silicon-via filling process using copper electrochemical deposition at different current densities
Crossref DOI link: https://doi.org/10.1038/srep46639
Published Online: 2017-04-19
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Fuliang
Zhao, Zhipeng
Nie, Nantian
Wang, Feng
Zhu, Wenhui
Text and Data Mining valid from 2017-04-19
Version of Record valid from 2017-04-19
Article History
Received: 9 January 2017
Accepted: 17 March 2017
First Online: 19 April 2017
Competing interests
: The authors declare no competing financial interests.