High Temperature Terahertz Detectors Realized by a GaN High Electron Mobility Transistor
Crossref DOI link: https://doi.org/10.1038/srep46664
Published Online: 2017-04-21
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Hou, H. W.
Liu, Z.
Teng, J. H.
Palacios, T.
Chua, S. J.
Text and Data Mining valid from 2017-04-21
Version of Record valid from 2017-04-21
Article History
Received: 17 January 2017
Accepted: 22 March 2017
First Online: 21 April 2017
Competing interests
: The authors declare no competing financial interests.