Positive-bias gate-controlled metal–insulator transition in ultrathin VO2 channels with TiO2 gate dielectrics
Crossref DOI link: https://doi.org/10.1038/ncomms10104
Published Online: 2015-12-14
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Yajima, Takeaki
Nishimura, Tomonori
Toriumi, Akira
Text and Data Mining valid from 2015-12-14
Version of Record valid from 2015-12-14
Article History
Received: 27 February 2015
Accepted: 3 November 2015
First Online: 14 December 2015
Competing interests
: The authors declare no competing financial interests.