Yang, Chi-Yuan
Ding, Yi-Fan
Huang, Dazhen
Wang, Jue
Yao, Ze-Fan http://orcid.org/0000-0001-5590-0768
Huang, Chun-Xi
Lu, Yang
Un, Hio-Ieng
Zhuang, Fang-Dong
Dou, Jin-Hu http://orcid.org/0000-0002-6920-9051
Di, Chong-an http://orcid.org/0000-0002-6183-1321
Zhu, Daoben
Wang, Jie-Yu
Lei, Ting http://orcid.org/0000-0001-8190-9483
Pei, Jian
Funding for this research was provided by:
National Natural Science Foundation of China (21790360, 21722201, 21420102005)
Article History
Received: 14 January 2020
Accepted: 2 June 2020
First Online: 3 July 2020
Competing interests
: The authors declare the following competing interest: a pending patent application (CN 201910322353.6) entitled “Application of triaminomethane derivatives as <i>n</i>-dopants in semiconductor materials,” which Peking University is the patent applicant and J.P., C.-Y.Y., J.-Y.W., T.L., Y.L., and Y.-F.D. are co-inventors. The contents of this patent application are based on the results described in the present study.