Publisher Correction: Ambipolar device simulation based on the drift-diffusion model in ion-gated transition metal dichalcogenide transistors
Crossref DOI link: https://doi.org/10.1038/s41524-020-0314-9
Published Online: 2020-04-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Ueda, Akiko http://orcid.org/0000-0001-5041-4445
Zhang, Yijin http://orcid.org/0000-0003-1127-1124
Sano, Nobuyuki
Imamura, Hiroshi
Iwasa, Yoshihiro
Text and Data Mining valid from 2020-04-09
Version of Record valid from 2020-04-09
Article History
First Online: 9 April 2020