Ternary Resistance Switching Memory Behavior Based on Graphene Oxide Embedded in a Polystyrene Polymer Layer
Crossref DOI link: https://doi.org/10.1038/s41598-017-04299-z
Published Online: 2017-06-21
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sun, Yanmei
Wen, Dianzhong
Bai, Xuduo
Lu, Junguo
Ai, Chunpeng
Text and Data Mining valid from 2017-06-21
Version of Record valid from 2017-06-21
Article History
Received: 6 December 2016
Accepted: 15 May 2017
First Online: 21 June 2017
Competing Interests
: The authors declare that they have no competing interests.