Excellent low-voltage operating flexible ferroelectric organic transistor nonvolatile memory with a sandwiching ultrathin ferroelectric film
Crossref DOI link: https://doi.org/10.1038/s41598-017-09533-2
Published Online: 2017-08-21
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Xu, Ting
Xiang, Lanyi
Xu, Meili
Xie, Wenfa
Wang, Wei
Text and Data Mining valid from 2017-08-21
Version of Record valid from 2017-08-21
Article History
Received: 13 April 2017
Accepted: 17 July 2017
First Online: 21 August 2017
Competing Interests
: The authors declare that they have no competing interests.