Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate
Crossref DOI link: https://doi.org/10.1038/s41598-017-11757-1
Published Online: 2017-09-22
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Tran, Binh Tinh
Hirayama, Hideki
Text and Data Mining valid from 2017-09-22
Version of Record valid from 2017-09-22
Article History
Received: 26 January 2017
Accepted: 30 August 2017
First Online: 22 September 2017
Competing Interests
: The authors declare that they have no competing interests.