85% internal quantum efficiency of 280-nm AlGaN multiple quantum wells by defect engineering
Crossref DOI link: https://doi.org/10.1038/s41598-017-14825-8
Published Online: 2017-10-31
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Tzu-Yu
Tasi, Chi-Tsung
Lin, Chia-Feng
Wuu, Dong-Sing http://orcid.org/0000-0002-0314-8743
Text and Data Mining valid from 2017-10-31
Version of Record valid from 2017-10-31
Article History
Received: 15 August 2017
Accepted: 16 October 2017
First Online: 31 October 2017
Competing Interests
: The authors declare that they have no competing interests.