Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
Crossref DOI link: https://doi.org/10.1038/s41598-017-17066-x
Published Online: 2018-01-17
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Shih, Cheng Wei
Chin, Albert
Lu, Chun Fu
Su, Wei Fang
Text and Data Mining valid from 2018-01-17
Version of Record valid from 2018-01-17
Article History
Received: 22 August 2017
Accepted: 30 October 2017
First Online: 17 January 2018
Competing Interests
: The authors declare that they have no competing interests.