High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
Crossref DOI link: https://doi.org/10.1038/s41598-017-17273-6
Published Online: 2017-12-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Toko, Kaoru
Yoshimine, Ryota
Moto, Kenta
Suemasu, Takashi
Text and Data Mining valid from 2017-12-05
Version of Record valid from 2017-12-05
Article History
Received: 28 July 2017
Accepted: 23 November 2017
First Online: 5 December 2017
Competing Interests
: The authors declare that they have no competing interests.