Effect of Different Gate Lengths on Polarization Coulomb Field Scattering Potential in AlGaN/GaN Heterostructure Field-Effect Transistors
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Update policy: https://doi.org/10.1007/SPRINGER_CROSSMARK_POLICY
Text and Data Mining valid from 2018-06-13
9 January 2018
1 June 2018
13 June 2018
The authors declare no competing interests.