Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Crossref DOI link: https://doi.org/10.1038/s41598-019-39786-y
Published Online: 2019-03-13
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Li, Hung-Wei
Chang, Chih-Wei http://orcid.org/0000-0003-0956-3179
Text and Data Mining valid from 2019-03-13
Version of Record valid from 2019-03-13
Article History
Received: 27 June 2018
Accepted: 31 January 2019
First Online: 13 March 2019
Competing Interests
: The authors declare no competing interests.