High-performance flat-type InGaN-based light-emitting diodes with local breakdown conductive channel
Crossref DOI link: https://doi.org/10.1038/s41598-019-49727-4
Published Online: 2019-09-20
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Baek, Seung-Hye
Lee, Hyun-Jin
Lee, Sung-Nam http://orcid.org/0000-0002-4800-5199
Funding for this research was provided by:
Samsung (SRFC-IT1501-06)
Text and Data Mining valid from 2019-09-20
Version of Record valid from 2019-09-20
Article History
Received: 16 May 2019
Accepted: 30 August 2019
First Online: 20 September 2019
Competing Interests
: The authors declare no competing interests.