High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
Crossref DOI link: https://doi.org/10.1038/s41598-019-53084-7
Published Online: 2019-11-12
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Saito, M.
Moto, K.
Nishida, T.
Suemasu, T. http://orcid.org/0000-0001-6012-4986
Toko, K.
Text and Data Mining valid from 2019-11-12
Version of Record valid from 2019-11-12
Article History
Received: 2 July 2019
Accepted: 21 October 2019
First Online: 12 November 2019
Competing interests
: The authors declare no competing interests.