Filamentary Resistive Switching and Capacitance-Voltage Characteristics of the a-IGZO/TiO2 Memory
Crossref DOI link: https://doi.org/10.1038/s41598-020-66339-5
Published Online: 2020-06-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Heo, Kwan-Jun
Kim, Han-Sang
Lee, Jae-Yun
Kim, Sung-Jin
Text and Data Mining valid from 2020-06-09
Version of Record valid from 2020-06-09
Article History
Received: 17 March 2020
Accepted: 19 May 2020
First Online: 9 June 2020
Competing interests
: The authors declare no competing interests.