Author Correction: A quantitative approach for trap analysis between Al0.25Ga0.75N and GaN in high electron mobility transistors
Crossref DOI link: https://doi.org/10.1038/s41598-021-02854-3
Published Online: 2021-12-02
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Amir, Walid
Shin, Ju‑Won
Shin, Ki‑Yong
Kim, Jae‑Moo
Cho, Chu‑Young
Park, Kyung‑Ho
Hoshi, Takuya
Tsutsumi, Takuya
Sugiyama, Hiroki
Matsuzaki, Hideaki
Kim, Tae‑Woo
Text and Data Mining valid from 2021-12-02
Version of Record valid from 2021-12-02
Article History
First Online: 2 December 2021