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3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary’s influence

Crossref DOI link: https://doi.org/10.1038/s41598-022-18682-y

Published Online: 2022-08-24

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Lee, Sang Ho

Park, Jin

Min, So Ra

Kim, Geon Uk

Jang, Jaewon

Bae, Jin-Hyuk

Lee, Sin-Hyung

Kang, In Man
Funding

Funding for this research was provided by:

National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087, NRF-2020R1A2C1005087)

BK21 FOUR project funded by the Ministry of Education, Korea (4199990113966, 4199990113966, 4199990113966, 4199990113966, 4199990113966, 4199990113966, 4199990113966, 4199990113966)

Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927, NRF-2021R1A6A3A13039927)

National R&D Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764, 2021M3F3A2A03017764)

Semiconductor Industry Collaborative Project between Kyungpook National University and Samsung Electronics Co. Ltd

IC Design Education Center (IDEC), Korea
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Article History

Received: 17 May 2022

Accepted: 17 August 2022

First Online: 24 August 2022

Competing interests

: The authors declare no competing interests.

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