Vertical tunneling FET with Ge/Si doping-less heterojunction, a high-performance switch for digital applications
Crossref DOI link: https://doi.org/10.1038/s41598-023-44096-5
Published Online: 2023-10-05
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Cherik, Iman Chahardah
Mohammadi, Saeed
Maity, Subir Kumar
Text and Data Mining valid from 2023-10-05
Version of Record valid from 2023-10-05
Article History
Received: 17 July 2023
Accepted: 3 October 2023
First Online: 5 October 2023
Competing interests
: The authors declare no competing interests.