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Vertically grown metal nanosheets integrated with atomic-layer-deposited dielectrics for transistors with subnanometre capacitance-equivalent thicknesses

Crossref DOI link: https://doi.org/10.1038/s41928-024-01202-3

Published Online: 2024-07-08

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Zhang, Lei

Liu, Zhaochao

Ai, Wei

Chen, Jiabiao http://orcid.org/0000-0002-8536-6575
Lv, Zunxian

Wang, Bing

Yang, Mingjian

Luo, Feng http://orcid.org/0000-0003-3442-3987
Wu, Jinxiong http://orcid.org/0000-0002-0286-1213
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Text and Data Mining valid from 2024-07-08

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Article History

Received: 12 November 2023

Accepted: 11 June 2024

First Online: 8 July 2024

Competing interests

: The authors declare no competing interests.

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