Polymer ferroelectric field-effect memory device with SnO channel layer exhibits record hole mobility
Crossref DOI link: https://doi.org/10.1038/srep05243
Published Online: 2014-06-10
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Caraveo-Frescas, J. A.
Khan, M. A.
Alshareef, H. N.
Text and Data Mining valid from 2014-06-10
Version of Record valid from 2014-06-10
Article History
Received: 3 February 2014
Accepted: 23 May 2014
First Online: 10 June 2014
Competing interests
: The authors declare no competing financial interests.