Graphene-based lateral heterostructure transistors exhibit better intrinsic performance than graphene-based vertical transistors as post-CMOS devices
Crossref DOI link: https://doi.org/10.1038/srep06607
Published Online: 2014-10-20
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Logoteta, Demetrio
Fiori, Gianluca
Iannaccone, Giuseppe
Text and Data Mining valid from 2014-10-20
Version of Record valid from 2014-10-20
Article History
Received: 29 April 2014
Accepted: 4 August 2014
First Online: 20 October 2014
Competing interests
: The authors declare no competing financial interests.