Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors
Crossref DOI link: https://doi.org/10.1038/srep18307
Published Online: 2015-12-17
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Mao, Ling-Feng
Ning, Huansheng
Huo, Zong-Liang
Wang, Jin-Yan
Text and Data Mining valid from 2015-12-17
Version of Record valid from 2015-12-17
Article History
Received: 1 September 2015
Accepted: 16 November 2015
First Online: 17 December 2015
Competing interests
: The authors declare no competing financial interests.