Correction: Corrigendum: Active layers of high-performance lead zirconate titanate at temperatures compatible with silicon nano- and microelectronic devices
Crossref DOI link: https://doi.org/10.1038/srep22499
Published Online: 2016-03-07
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bretos, Iñigo
Jiménez, Ricardo
Tomczyk, Monika
Rodríguez-Castellón, Enrique
Vilarinho, Paula M.
Calzada, M. Lourdes
Text and Data Mining valid from 2016-03-07
Version of Record valid from 2016-03-07
Article History
First Online: 7 March 2016