A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD
Crossref DOI link: https://doi.org/10.1038/srep24448
Published Online: 2016-04-22
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Wang, Wenliang
Wang, Haiyan
Yang, Weijia
Zhu, Yunnong
Li, Guoqiang
Text and Data Mining valid from 2016-04-22
Version of Record valid from 2016-04-22
Article History
Received: 4 February 2016
Accepted: 29 March 2016
First Online: 22 April 2016
Competing interests
: The authors declare no competing financial interests.