Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications
Crossref DOI link: https://doi.org/10.1038/srep28966
Published Online: 2016-07-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Han, Un-Bin
Lee, Jang-Sik
Text and Data Mining valid from 2016-07-01
Version of Record valid from 2016-07-01
Article History
Received: 15 March 2016
Accepted: 7 June 2016
First Online: 1 July 2016
Competing interests
: The authors declare no competing financial interests.