Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed
Crossref DOI link: https://doi.org/10.1038/srep29875
Published Online: 2016-09-22
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Renard, Charles
Molière, Timothée
Cherkashin, Nikolay
Alvarez, José
Vincent, Laetitia
Jaffré, Alexandre
Hallais, Géraldine
Connolly, James Patrick
Mencaraglia, Denis
Bouchier, Daniel
Text and Data Mining valid from 2016-09-22
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First Online: 22 September 2016