Topological band-order transition and quantum spin Hall edge engineering in functionalized X-Bi(111) (X = Ga, In, and Tl) bilayer
Crossref DOI link: https://doi.org/10.1038/srep33395
Published Online: 2016-09-14
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Kim, Youngjae
Yun, Won Seok
Lee, J. D.
Text and Data Mining valid from 2016-09-14
Version of Record valid from 2016-09-14
Article History
Received: 25 May 2016
Accepted: 25 August 2016
First Online: 14 September 2016
Competing interests
: The authors declare no competing financial interests.