Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and “Negative” Thermal Activation Energy
Crossref DOI link: https://doi.org/10.1038/srep34545
Published Online: 2016-09-30
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Bao, Wei
Su, Zhicheng
Zheng, Changcheng
Ning, Jiqiang
Xu, Shijie
Text and Data Mining valid from 2016-09-30
Version of Record valid from 2016-09-30
Article History
Received: 8 April 2016
Accepted: 14 September 2016
First Online: 30 September 2016
Competing interests
: The authors declare no competing financial interests.