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The effect of the hydrofluoric acid etchant–silicon system anisotropy on the shape of pores formed upon electrochemical etching of silicon

Crossref DOI link: https://doi.org/10.1134/S0012500815090025

Published Online: 2015-10-09

Published Print: 2015-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

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