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High-temperature buried InP/GaInAsP heterostructure laser diode emitting at 1310 nm

Crossref DOI link: https://doi.org/10.1134/S0020168514090167

Published Online: 2014-08-05

Published Print: 2014-09

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Vasil’ev, M. G.

Vasil’ev, A. M.

Izotov, A. D.

Shelyakin, A. A.
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