Integral isoconversional method for evaluating crystallization parameters of thin films of Ge2Sb2Te5 phase change memory materials
Crossref DOI link: https://doi.org/10.1134/S0020168517010150
Published Online: 2017-02-23
Published Print: 2017-01
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Sherchenkov, A. A.
Kozyukhin, S. A.
Babich, A. V.
Lazarenko, P. I.
Vargunin, A. I.
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