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Electrical Properties of High-Quality Synthetic Boron-Doped Diamond Single Crystals and Schottky Barrier Diodes on Their Basis

Crossref DOI link: https://doi.org/10.1134/S0020168518150037

Published Online: 2019-01-17

Published Print: 2018-12

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Bormashov, V. S.

Tarelkin, S. A.

Buga, S. G.

Volkov, A. P.

Golovanov, A. V.

Kuznetsov, M. S.

Kornilov, N. V.

Teteruk, D. V.

Luparev, N. V.

Terent’ev, S. A.

Blank, V. D.
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Article History

Received: 5 October 2016

First Online: 17 January 2019