Detectors on the Basis of High-Purity Epitaxial GaAs Layers for Spectrometry of X and Gamma Rays
Crossref DOI link: https://doi.org/10.1134/S0020441218040176
Published Online: 2018-09-27
Published Print: 2018-09
Update policy: https://doi.org/10.1007/springer_crossmark_policy
Chernykh, S. V.
Chernykh, A. V.
Chubenko, A. P.
Pavlyuchenko, L. N.
Sveshnikov, Yu. N.
Glybin, Yu. N.
Konovalov, M. P.
Panichkin, A. V.
Didenko, S. I.
Text and Data Mining valid from 2018-09-01
Article History
Received: 26 December 2017
First Online: 27 September 2018