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Conductance of a lateral p—n junction in two-dimensional HgTe structures with an inverted spectrum: The role of edge states

Crossref DOI link: https://doi.org/10.1134/S0021364015070115

Published Online: 2015-06-18

Published Print: 2015-04

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Min’kov, G. M.

Sherstobitov, A. A.

Germanenko, A. V.

Rut, O. E.

Dvoretskii, S. A.

Mikhailov, N. N.
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