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Features of the Electronic Structure of the Bi2Se3 Topological Insulator Digitally Doped with 3d Transition Metals

Crossref DOI link: https://doi.org/10.1134/S0021364019020097

Published Online: 2019-04-22

Published Print: 2019-01

Update policy: https://doi.org/10.1007/springer_crossmark_policy

Authors

Kulatov, E. T.

Men’shov, V. N.

Tugushev, V. V.

Uspenskii, Yu. A.
License Information

Text and Data Mining valid from 2019-01-01
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Article History

Received: 12 October 2018

Revised: 19 November 2018

Accepted: 21 November 2018

First Online: 22 April 2019