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Forming-Free Memristors Based on Hafnium Oxide Processed in Electron Cyclotron Resonance Hydrogen Plasma

Published Online: 2022-03-31

Published Print: 2022-01

Authors

Perevalov, T. V.

Iskhakzai, R. M. Kh.

Prosvirin, I. P.

Aliev, V. Sh.

Gritsenko, V. A.
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Text and Data Mining valid from 2022-01-01

Version of Record valid from 2022-01-01
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Article History

Received: 17 November 2021

Revised: 17 November 2021

Accepted: 25 November 2021

First Online: 31 March 2022

CONFLICT OF INTEREST

: The authors declare that they have no conflicts of interest.

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